Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

Hongda Chen; Rong Han Wu; Zhibiao Chen; Yi H. Zhang; Yun Du; Qing-Ming Zeng; Xian-Jie Li; Yimo Zhang; Ge Zhou; Feng Hua

doi:10.1117/12.348324

30 April 1999 Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

Hongda Chen, Rong Han Wu, Zhibiao Chen, Yi H. Zhang, Yun Du, Qing-Ming Zeng, Xian-Jie Li, Yimo Zhang, Ge Zhou, Feng Hua

Proceedings Volume 3631, Optoelectronic Integrated Circuits and Packaging III; (1999) https://doi.org/10.1117/12.348324
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 micrometers silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850 nm operation. The measurement result under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4 X 4 optoelectronic crossbar structure consisting of hybrid CMOS- SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.

Citation Download Citation

Hongda Chen, Rong Han Wu, Zhibiao Chen, Yi H. Zhang, Yun Du, Qing-Ming Zeng, Xian-Jie Li, Yimo Zhang, Ge Zhou, and Feng Hua "Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels", Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); https://doi.org/10.1117/12.348324

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