Paper
26 July 1999 Optical proximity correction for submicron lithography by laser direct writing
Yongkang Guo, Jinglei Du, Qizhong Huang, Jun Yao, Chuankai Qiu, Zheng Cui
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Abstract
Generally, a laser direct writing lithography system can only produce feature sizes larger than its beam spot size. When the feature size is comparable to its spot size, corner rounding and line shortening appears. This is caused by optical proximity effect. The effect is mainly due to light intensity spread in a laser beam which causes the spread of photon energy in resist layer. A new pre-compensation method has been developed to correct the optical proximity effect. The method has been implemented in the ISI-2802 laser direct write system. Feature size down to 0.6 micrometers has been produced with the system which normally can only produce 1 micrometers lithography without proximity correction.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongkang Guo, Jinglei Du, Qizhong Huang, Jun Yao, Chuankai Qiu, and Zheng Cui "Optical proximity correction for submicron lithography by laser direct writing", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354383
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Cited by 1 scholarly publication.
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KEYWORDS
Lithography

Optical proximity correction

Laser systems engineering

Electron beam lithography

Laser optics

Distortion

Optical lithography

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