High-temperature solution growth of oxide single crystals

Andrzej Majchrowski

doi:10.1117/12.342984

24 March 1999 High-temperature solution growth of oxide single crystals

Andrzej Majchrowski

Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.342984
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

High temperature solution growth of oxide single crystals has become very useful method in investigations of new classes of materials for opto-electronics. In this paper applicability of this method, its advantages, and disadvantages have been discussed. Investigations of crystallization of several oxides such as mixed sillenites Bi₁₂Ti_1-xM_xO₂₀ (M equals Pb, Ga, V), double tungstates (K_1-xCs_xDy(WO₄)₂ and KGd(WO₄)₂:Nd), and borates (CsLiB₆O₁₀ and YAl₃(BO₃)₄:Nd) carried out by this technique have been described.

Citation Download Citation

Andrzej Majchrowski "High-temperature solution growth of oxide single crystals", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342984

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