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24 March 1999 Initial rise methods in the analysis of thermally stimulated relaxation phenomena
Arkadiusz Mandowski, Jozef Swiatek-Prokop
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Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.342989
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland
Abstract
An accuracy of the initial rise method is considered, as applied to the determination of the activation energy from thermoluminescence and thermally stimulated conductivity spectra. The method is analyzed in the classical case described by the simple trap model as well as in the presence of spatial correlation between traps. For this purpose a novel, generalized version of the Monte Carlo algorithm was developed. It allows to simulate TSR processes with an arbitrary heating function applied that gives the possibility of simulating the use of the initial rise method and the fractional glow technique. An influence of initial filling of traps on the initial rise method is analyzed. It is confirmed that for sufficiently low initial concentration of charge carriers in traps the method gives correct values of the activation energies even in the case of strong retrapping. This conclusion is valid irrespective of the spatial correlation between traps and recombination centers.
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Arkadiusz Mandowski and Jozef Swiatek-Prokop "Initial rise methods in the analysis of thermally stimulated relaxation phenomena", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342989
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KEYWORDS
Monte Carlo methods
Algorithm development
Electrons
Differential equations
Standards development
Shape analysis
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