Recrystallized polysilicon on insulating substrates as a material for optoelectronic sensors

Anatoly A. Druzhinin; Igor Pankevich; Yury Khoverko

doi:10.1117/12.346835

30 April 1999 Recrystallized polysilicon on insulating substrates as a material for optoelectronic sensors

Anatoly A. Druzhinin, Igor Pankevich, Yury Khoverko

Proceedings Volume 3730, Optoelectronic and Electronic Sensors III; (1999) https://doi.org/10.1117/12.346835
Event: Optoelectronic and Electronic Sensors III, 1998, Jurata, Poland

Abstract

Microzone laser recrystallization is represented as a method for obtaining the SOI structures with improved characteristics. The processes of poly-Si-heating is analyzed theoretically and experimentally. A special attention is paid to the control of processes of defects formation and application of polysilicon layers with increased average grain size in the technology of optoelectronic sensors.

Citation Download Citation

Anatoly A. Druzhinin, Igor Pankevich, and Yury Khoverko "Recrystallized polysilicon on insulating substrates as a material for optoelectronic sensors", Proc. SPIE 3730, Optoelectronic and Electronic Sensors III, (30 April 1999); https://doi.org/10.1117/12.346835

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