CFD simulation of pulsed MOCVD to reduce gas-phase parasitic reaction

Ning Zhou; Samuel A. Lowry; Anantha Krishnan

doi:10.1117/12.351300

6 July 1999 CFD simulation of pulsed MOCVD to reduce gas-phase parasitic reaction

Ning Zhou, Samuel A. Lowry, Anantha Krishnan

Proceedings Volume 3792, Materials Research in Low Gravity II; (1999) https://doi.org/10.1117/12.351300
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

A Computational Fluid Dynamics (CFD) code is used to determine the potential benefit of pulsed Metal-Organic Chemical Vapor Deposition (MOCVD). When AlN is grown using MOCVD over a range of pressures (30 to 270 Torr) and substrate temperatures (400°C to 900°C), gas-phase mixing of the precursor (TMA1) and ammonia hydride (NH₃)leads to adduct formation. This adduct formation may produce some undesired particulate by-products and deplete the precursors at elevated pressure and temperature. In order to reduce this gas-phase parasitic reaction, the pulsed inlet condition as proposed by Bachmann et al. is utilized to effectively separate the precursor form ammonia in gas- phase. It is predicted that for high reactor pressure (270 Torr), the growth efficiency of AlN can be enhanced by a factor of 3 through the pulsed MOCVD technique while simultaneously reducing the particle formation. The improvement by pulsed MOCVD is also demonstrated for a proposed 3D (North Carolina State University) research reactor.

Citation Download Citation

Ning Zhou, Samuel A. Lowry, and Anantha Krishnan "CFD simulation of pulsed MOCVD to reduce gas-phase parasitic reaction", Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); https://doi.org/10.1117/12.351300

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