Silicon p-i-n photodiode with low values of dark current

A. A. Ascheulov; Vasily M. Godovanyuk; Yu. G. Dobrovolsky; Ilary M. Rarenko; V. V. Ryukhtin; Sergey E. Ostapov

doi:10.1117/12.368340

4 November 1999 Silicon p-i-n photodiode with low values of dark current

A. A. Ascheulov, Vasily M. Godovanyuk, Yu. G. Dobrovolsky, Ilary M. Rarenko, V. V. Ryukhtin, Sergey E. Ostapov

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368340
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

Dark current dependence of silicon p-i-n photodiode on the p⁺-type layer location depth at the photodiode crystal back. It was revealed that the smallest specific values of dark current is obtained at 6-9 micrometers p⁺- type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge.

Citation Download Citation

A. A. Ascheulov, Vasily M. Godovanyuk, Yu. G. Dobrovolsky, Ilary M. Rarenko, V. V. Ryukhtin, and Sergey E. Ostapov "Silicon p-i-n photodiode with low values of dark current", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368340

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