Paper
7 June 2000 Dynamical Stark effect in small quantum dots
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Abstract
Using time dependent perturbation technique, Stark shift and self-energy correction in semiconductor quantum dot are studied. The analytical results are obtained by incorporating the important excitonic and biexcitonic effects. The numerical estimations are made for potentially important II-VI semiconductor quantum dot CdS of size smaller than the bulk exciton Bohr radius. The demonstration of analytical and numerical result predicts a red shift of (Delta) E/3 with (Delta) E being the biexciton binding energy. The Stark shift and self energy correction are found to have higher amplitudes at high excitation intensities due to the presence of biexcitons.
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Joseph Thomas Andrews and Pratima Sen "Dynamical Stark effect in small quantum dots", Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); https://doi.org/10.1117/12.387566
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KEYWORDS
Excitons

Quantum dots

Semiconductors

Cadmium sulfide

Electromagnetism

Laser applications

Optoelectronic devices

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