Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: effect of low-temperature heat treatment in N2

Richard J. Potter; Naci Balkan; Michael J. Adams; Paul R. Chalker; Tim B. Joyce; Tim J. Bullough

doi:10.1117/12.391403

14 July 2000 Photoluminescence in Ga_0.85In_0.15As_0.99N0.01/GaAs single quantum wells: effect of low-temperature heat treatment in N₂

Richard J. Potter, Naci Balkan, Michael J. Adams, Paul R. Chalker, Tim B. Joyce, Tim J. Bullough

Author Affiliations +

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391403
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We present the results of our studies concerning temperature dependence of photoluminescence (PL) in Ga_xIn_1-xAs_{1- y}N_y/GaAs single quantum wells. Our results at low temperatures indicate the presence of a high density of compositional and/or structural disorder and hence poor PL efficiency, common to as-grown GaInAsN material. We show, however, that the optical quality of GaInAsN can be improved while achieving a red shift in the spectra. This is unlike the results obtained by rapid thermal annealing (RTA) or conventional annealing, which are widely employed as post- growth treatment techniques, where any increase in the PL intensity is almost always accompanied by an undesired blue- shift.

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Richard J. Potter, Naci Balkan, Michael J. Adams, Paul R. Chalker, Tim B. Joyce, and Tim J. Bullough "Photoluminescence in Ga_0.85In_0.15As_0.99N0.01/GaAs single quantum wells: effect of low-temperature heat treatment in N₂", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391403

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