Raman probe of new laser materials GaAs1-xBix and InAs1-xBix

Prabhat Verma; Martin Herms; Gert Irmer; Masayoshi Yamada; Hiroshi Okamoto; Kunishige Oe

doi:10.1117/12.380534

29 March 2000 Raman probe of new laser materials GaAs_1-xBi_xand InAs_1-xBi_x

Prabhat Verma, Martin Herms, Gert Irmer, Masayoshi Yamada, Hiroshi Okamoto, Kunishige Oe

Proceedings Volume 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V; (2000) https://doi.org/10.1117/12.380534
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Inclusion of a small amount of Bi in InAs and GaAs changes the temperature dependent behavior of the band gap. Both InAs_{1- x}Bi_x and GaAs_1-xBi_x tend to have temperature insensitive band gap with increasing Bi content. Raman scattering has been performed on the epilayers of InAs_{1- x}Bi_x and GaAs_1-xBi_x compounds grown by MOVPE technique for varying Bi content. Good single crystalline growth with spatial homogeneity was confirmed using micro- Raman technique. Vibrational modes of InBi and GaBi were observed in the two materials, respectively. In addition, vibrational modes corresponding to Bi and phonon-plasmon coupled modes were also observed. Experimental results indicate that Bi atoms homogeneously replace some of the As atoms in both InAs as well as in GaAs to provide good crystalline structures of InAs_1-xBi_x and GaAs_{1- x}Bi_x compounds, respectively.

Citation Download Citation

Prabhat Verma, Martin Herms, Gert Irmer, Masayoshi Yamada, Hiroshi Okamoto, and Kunishige Oe "Raman probe of new laser materials GaAs_1-xBi_xand InAs_1-xBi_x", Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); https://doi.org/10.1117/12.380534

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