Paper
2 June 2000 Design and analysis of across-chip linewidth variation for printed features at 130 nm and below
J. Fung Chen, Robert John Socha, Kumar Puntambekar, Kurt E. Wampler, Roger F. Caldwell, Mircea V. Dusa, John C. Love, Greg Yeric, Brenda Stoner
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Abstract
We discuss the incentive and design outlines for a reticle that is used for assessing across-chip linewidth variation (ACLV). For printing features whose dimensions are near half of the exposure wavelength ((lambda) ), the ACLV Solver reticle can be used to diagnose the contributing factors that cause the critical dimension (CD) to vary out of control. For example, mask error factor (MEF) and mask pattern density loading have both been shown to have a significant impact on ACLV. The focus of this paper is the ACLV design methodology, along with a couple of proposed designs of experiment (DOE). Conclusions and future work are discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Fung Chen, Robert John Socha, Kumar Puntambekar, Kurt E. Wampler, Roger F. Caldwell, Mircea V. Dusa, John C. Love, Greg Yeric, and Brenda Stoner "Design and analysis of across-chip linewidth variation for printed features at 130 nm and below", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386469
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KEYWORDS
Reticles

Critical dimension metrology

Diffractive optical elements

Optical proximity correction

Scanning electron microscopy

Semiconducting wafers

Photomasks

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