Film characterization and evaluation of process performance for the modified electron beam resist

Fu-Hsiang Ko; Jyh-Hua Ting; Cheng-Tung Chou; Li-Tung Hsiao; Tiao-Yuan Huang; Bau-Tong Dai

doi:10.1117/12.388268

23 June 2000 Film characterization and evaluation of process performance for the modified electron beam resist

Fu-Hsiang Ko, Jyh-Hua Ting, Cheng-Tung Chou, Li-Tung Hsiao, Tiao-Yuan Huang, Bau-Tong Dai

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388268
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The modification of the electron beam resist by spiking with various amounts of poly(styrene-co-maleic anhydride) copolymer is performed. The characterization of resist solutions by gel permeation chromatography (GPC) and viscosity measurement reveals the main polymer chain in the resist is unchangeable, irrespective of the amount of modification. In addition, the spiking copolymer exists in original form. The viscosity of the resist increases with the amount of spiking polymer. Our thermal analysis results show that the resist are mainly decomposed in two regions (280 and 544 degrees Celsius). The mass loss at 280 degrees Celsius is significant higher than at 544 degrees Celsius. The spectra of Fourier transform infrared red (FTIR) spectrometer indicate the extent of carbonate group decomposition decreases with temperature for resists. The plasma etching experiment indicates the promotion of etching resistance of the resist film is due to modification, while the resolution, sensitivity and contrast are not degraded. Owing to the polymer aggregation effect, the stripping performance of the resist film can achieve better after copolymer modification.

Citation Download Citation

Fu-Hsiang Ko, Jyh-Hua Ting, Cheng-Tung Chou, Li-Tung Hsiao, Tiao-Yuan Huang, and Bau-Tong Dai "Film characterization and evaluation of process performance for the modified electron beam resist", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388268

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KEYWORDS

Polymers

Electron beams

Etching

Plasma etching

FT-IR spectroscopy

Ion implantation

Resistance

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