Optimization for full-chip process of 130-nm technology with 248-nm DUV lithography

Young-Mog Ham; Seok-Kyun Kim; Sang-Jin Kim; Cheol Hur; YoungSik Kim; Ki-Ho Baik; Bong-Ho Kim; Dong-Jun Ahn

doi:10.1117/12.388941

5 July 2000 Optimization for full-chip process of 130-nm technology with 248-nm DUV lithography

Young-Mog Ham, Seok-Kyun Kim, Sang-Jin Kim, Cheol Hur, YoungSik Kim, Ki-Ho Baik, Bong-Ho Kim, Dong-Jun Ahn

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388941
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

We estimated the process margins of various cell structures and process problems for full chip process under extreme resolution limit of exposure tool. Therefore, optimizing off axis illumination (OAI) condition for various structures obtained the fine pattern and wider process margin using simulation and experiment. From our experiment, we should use as higher numerical aperture (NA), smaller R and smaller as possible to reduce critical dimension (CD) difference between dense and isolated patterns. Process margins are obtained more than 8 percent exposure latitude (EL) and 0.5 micrometers depth of focus (DOF) for each cell. However, we can consider using of attenuated phase shift mask to improve the exposure and DOF margin. We find that real full chip process induces the critical problems such as isolated line (I/L) and space (I/S) pattern variation due to lens aberration, partial coherence effect, mask error effect, and optical proximity effect. These effects play a role to determine the design rule of cell and periphery structures. In spite of good lens quality, variation of I/L and I/S pattern for various exposure conditions is almost 40nm or more compared to line and space pattern. These phenomena are becoming the critical issue to fulfill the full chip process of 130nm lithography. By optimizing mask error effect, isolated and dense pattern bias, and OAI, we can achieve 130nm technology with 248nm KrF lithography.

Citation Download Citation

Young-Mog Ham, Seok-Kyun Kim, Sang-Jin Kim, Cheol Hur, YoungSik Kim, Ki-Ho Baik, Bong-Ho Kim, and Dong-Jun Ahn "Optimization for full-chip process of 130-nm technology with 248-nm DUV lithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388941

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