Dielectric dilatometry on thin Teflon-PTFE films prepared by pulsed-laser deposition

Reinhard Schwoediauer; Simona Bauer-Gogonea; Stefan Bauer; J. Heitz; Enno Arenholz; Dieter Baeuerle

doi:10.1117/12.373688

14 December 1999 Dielectric dilatometry on thin Teflon-PTFE films prepared by pulsed-laser deposition

Reinhard Schwoediauer, Simona Bauer-Gogonea, Stefan Bauer, J. Heitz, Enno Arenholz, Dieter Baeuerle

Proceedings Volume 4017, Polymers and Liquid Crystals; (1999) https://doi.org/10.1117/12.373688
Event: International Conference on Dielectric and Related Phenomena '98, 1998, Szczyrk, Poland

Abstract

Polytetrafluoroethylene (Teflon PTFE) films were grown by pulsed-laser deposition (PLD). Films prepared by ablation from press-sintered targets are found to be highly crystalline, with spherulite sizes adjustable over more than one order in magnitude by suitable thermal annealing. As revealed by dielectric dilatometry, PLD-PTFE films show characteristics remarkably similar to those of conventional PTFE, i.e. the same structural first-order phase transitions. Dielectric losses are low and indicate no tendency to film oxidation. PLD-PTFE films additionally show an excellent charge-stability, comparable and even superior to commercially available Teflon-PTFE foils. PLD-PTFE enlarges the family of Teflon materials and may thus become interesting for potential miniaturized electret devices. Furthermore, dielectric dilatometry provides an elegant means for the determination of the coefficient of thermal expansion in thin nonpolar films.

Citation Download Citation

Reinhard Schwoediauer, Simona Bauer-Gogonea, Stefan Bauer, J. Heitz, Enno Arenholz, and Dieter Baeuerle "Dielectric dilatometry on thin Teflon-PTFE films prepared by pulsed-laser deposition", Proc. SPIE 4017, Polymers and Liquid Crystals, (14 December 1999); https://doi.org/10.1117/12.373688

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KEYWORDS

Dielectrics

Polymers

Thin films

Glasses

Crystals

Annealing

Plasma

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