Paper
17 July 2000 Comparison of infrared detection mechanisms in thermal-emissive vs. photoemissive silicon Schottky barrier arrays
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Abstract
Infrared imaging based on photoemission in metal- silicide/silicon Schottky barrier arrays is a mature technology that is currently employed in both military and commercial applications. Metal-silicide/silicon Schottky diodes can also be employed in uncooled bolometer arrays. The bolometer detection mechanism is thermionic emission in the Schottky barrier. Schottky bolometer array technology is expected to have both performance and production advantages, when compared with current uncooled sensor technology. In this paper, we compare the physical mechanisms involved in the two Schottky barrier based infrared sensors. We will also present a simplified model for the noise equivalent temperature of each technology.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Freeman D. Shepherd and James E. Murguia "Comparison of infrared detection mechanisms in thermal-emissive vs. photoemissive silicon Schottky barrier arrays", Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); https://doi.org/10.1117/12.391721
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Cited by 5 scholarly publications.
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KEYWORDS
Sensors

Diodes

Bolometers

Thermography

Electrodes

Quantum efficiency

Temperature metrology

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