Investigating the ferroelectric field effect in thin NdBa2Cu3O7 films using the Hall effect

S. Gariglio; C. H. Ahn; Jean-Marc Triscone

doi:10.1117/12.397848

6 September 2000 Investigating the ferroelectric field effect in thin NdBa₂Cu₃O₇ films using the Hall effect

S. Gariglio, C. H. Ahn, Jean-Marc Triscone

Proceedings Volume 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV; (2000) https://doi.org/10.1117/12.397848
Event: AeroSense 2000, 2000, Orlando, FL, United States

Abstract

We have used the reversible ferroelectric polarization of the perovskite oxide Pb(Zr_0.2Ti_0.8)O₃ in Pb(Zr_0.2Ti_0.8)O₃/Nd_1.13Ba_1.87Cu₃O_7-δ epitaxial heterostructures in order to electrostatically modulate the carrier concentration in thin Nd_1.13Ba_1.87Cu₃O₇ films via the ferroelectric field effect. For 100 angstrom thick Nd_1.13Ba_1.87Cu₃O₇ layers, we observe a correlated change in the normal state resistance and in the inverse Hall constant.

Citation Download Citation

S. Gariglio, C. H. Ahn, and Jean-Marc Triscone "Investigating the ferroelectric field effect in thin NdBa₂Cu₃O₇ films using the Hall effect", Proc. SPIE 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV, (6 September 2000); https://doi.org/10.1117/12.397848

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