Characterization of electrical and structural properties of ion-implanted GaAs by Raman scattering

L. P. Avakyants; P. A. Polyakov; Vladimir S. Gorelik

doi:10.1117/12.378190

25 February 2000 Characterization of electrical and structural properties of ion-implanted GaAs by Raman scattering

L. P. Avakyants, P. A. Polyakov, Vladimir S. Gorelik

Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378190
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy

Abstract

Raman spectra (RS) of GaAs implanted with 140 keV Si⁺ ions, both before and after annealing, were obtained at room temperature, in x(yz)x backscattering geometry, using the 514.5 nm line of Ar laser. The implantation-induced amorphous bands and LO-line shape changes were observed with increasing fluences from 10¹³ to 5 10¹⁴ cm^-2. We explained the modifications of the spectra via disorder-induced selection rule breakdown and estimated nanocrystallite size for different fluences according to the mode of reduction of the spatial correlation length. For annealing studies implanted samples were caped with Si₃N₄ layer and annealed at 900 C for 20 min in hydrogen. After annealing, the amorphous bands have disappeared, and the new spectral features were observed. We explained the evolution of the spectra by the dopant activation, resulting in RS by phonon-plasmon coupled modes and RS by LO phonon, originating from the surface-depletion layer. We interpreted shifts of the coupled modes and LO intensity change as evidence of the carrier concentration variation with fluences. Experimental results were described by the Lindhard-Mermin dielectric function including the non-parabolicity of the conduction band, evaluated for the case, when Drude approximation is not available. From Raman line-shape analysis we have obtained that the value of carrier concentration were 10¹⁸ cm^-3 for ion fluences 10¹³-5 10¹⁴ cm^-2.

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L. P. Avakyants, P. A. Polyakov, and Vladimir S. Gorelik "Characterization of electrical and structural properties of ion-implanted GaAs by Raman scattering", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378190

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KEYWORDS

Raman spectroscopy

Gallium arsenide

Remote sensing

Annealing

Silicon

Crystals

Ions

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