DC and AC characteristics of 850-nm broad-area vertical-cavity surface-emitting lasers

Hung-Pin D. Yang; Yeung-Sy Su; Wen-Chang Jiang; Mei-Li Wang; Sin-Jei Yu; Chia-Pin Sung

doi:10.1117/12.392195

11 July 2000 DC and AC characteristics of 850-nm broad-area vertical-cavity surface-emitting lasers

Hung-Pin D. Yang, Yeung-Sy Su, Wen-Chang Jiang, Mei-Li Wang, Sin-Jei Yu, Chia-Pin Sung

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392195
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

In this work, we have made AlGaAs/GaAs gain-guided broad- area vertical-cavity surface-emitting lasers (VCSELs) in the 850-nm range. For higher power applications such as optical pumping and optical communications, board-area VCSELs and VCSEL arrays are needed. The distributed Bragg reflectors (DBRs) of the VCSELs consist of Al_0.12Ga_0.88As/AlAs quarter-wave stacks. The GRINSCH active region is consisted of an undoped three-quantum-well GaAs/Al_0.3Ga_0.7As, two undoped Al_0.3Ga_0.7As confinement layers, and two undoped linearly graded Al_xGa_1-xAs layers. The current confinement of the VCSELs was made by proton implantation with an implantation energy of 280 KeV. The emitting window diameters are 30 to 50 (mu) m. A very high cw optical power of 23.4 mW and a pulsed optical power of over 36 mW were measured for a 50-(mu) m aperture device. These VCSELs are suitable for higher power applications. The VCSELs showed multiple transverse mode characteristics. The near-field characteristics and spectrum of the devices were measured and analyzed. The modulation characteristics of the VCSELs were also measured. A 3 dB bandwidth (f_3dB) of 5.6 Ghz was measured for a 30-(mu) m aperture device at 20mA.

Citation Download Citation

Hung-Pin D. Yang, Yeung-Sy Su, Wen-Chang Jiang, Mei-Li Wang, Sin-Jei Yu, and Chia-Pin Sung "DC and AC characteristics of 850-nm broad-area vertical-cavity surface-emitting lasers", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392195

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