Photoreflectance study of electric fields in ZnSe from ZnSe/GaAs/GaAs heterostructures

M. E. Constantino; B. Salazar-Hernandez

doi:10.1117/12.406450

15 December 2000 Photoreflectance study of electric fields in ZnSe from ZnSe/GaAs/GaAs heterostructures

M. E. Constantino, B. Salazar-Hernandez

Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406450
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

ZnSe/GaAs/GaAs heterostructures grown by Molecular Beam Epitaxy have been studied by Photoreflectance. From Franz-Keldysh oscillations we found the electric fields at ZnSe. It was observed that the electric field value decreases with the temperature. The calculated values (<58 kV/cm) are in agreement with the typical values in semiconductors and are higher than those at the interfacial GaAs. The electric field strength is conelated with the presence of superficial states due to defects such as dislocations.

Citation Download Citation

M. E. Constantino and B. Salazar-Hernandez "Photoreflectance study of electric fields in ZnSe from ZnSe/GaAs/GaAs heterostructures", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406450

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