Some features of gain and detectivity frequency dependencies of low-background extrinsic IR detectors

Nicolas B. Zaletaev

doi:10.1117/12.409837

15 December 2000 Some features of gain and detectivity frequency dependencies of low-background extrinsic IR detectors

Nicolas B. Zaletaev

Proceedings Volume 4130, Infrared Technology and Applications XXVI; (2000) https://doi.org/10.1117/12.409837
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

Experimental and theoretical studies of low-background behavior of extrinsic photoconductor detectors (EPDs) with a steady-state photoconductive gain G>1 and extrinsic double-injection photodiodes (EDIPs) were carried out. In both the cases, frequency response had two plateaus. It was established that four regions with various values of theoretical background limit of detectivity can be distinguished in the frequency range of EPDs. Temperature dependence of the 3-db cutoff frequency of low-frequency (LF) plateau for Si:Ga EPDs was found not to be described by existing models. This characteristic frequency sharply decreased with decreasing temperature (T<20K, background- limited current) and then became weakly dependent on temperature below 12 K. A model explaining this phenomenon through peculiarities of contact injection has been suggested. The responsivity of Ge:Hg EDIPs reached 2000 A/W, which corresponded to a gain of about 1000, and was about two orders of magnitude higher than that for EPDs of the same material. The ultimate detectivity in this case, nevertheless, was close to that of EPDs and the gain- bandwidth product was much greater. The decay segment between two plateaus on frequency response curve of EDIPs is more extended than that of EPDs, which is conditioned by great gain value for EDIPs. The high-frequency plateau of the curve is due to the displacement current, similar to EPD case, and the detectivity limit here is gain-dependent and lower than that for LF part of the curve, as well.

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Nicolas B. Zaletaev "Some features of gain and detectivity frequency dependencies of low-background extrinsic IR detectors", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); https://doi.org/10.1117/12.409837

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KEYWORDS

Sensors

Diodes

Photoresistors

Photodiodes

Polonium

Signal processing

Electric field sensors

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