Analysis of N-channel transistor punch-through related to STI process

Yunqiang Zhang; James Lee; Chock Hing Gan; David Vigar; Ravi Sundaresan

doi:10.1117/12.405372

24 October 2000 Analysis of N-channel transistor punch-through related to STI process

Yunqiang Zhang, James Lee, Chock Hing Gan, David Vigar, Ravi Sundaresan

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405372
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

In this paper we study the causes of an unusually high N- channel transistor punch through leakage using a shallow trench isolation process. This resistive short between source and drain exhibits high structural dependence and has a strong dependence on the channel length and the total field edge of the device. Unlike the normal off-channel leakage. The leakage current of this resistive short shows weak dependence on temperature. Such a correlation between leakage and structure is examined for the first time in this paper. Experimentation with various trench liner oxidation schemes and gap-fill densification was the key to resolve the leakage.

Citation Download Citation

Yunqiang Zhang, James Lee, Chock Hing Gan, David Vigar, and Ravi Sundaresan "Analysis of N-channel transistor punch-through related to STI process", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405372

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