Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy

Dao Hua Zhang; X. Z. Wang; Hai Qun Zheng; Soon Fatt Yoon; Chan Hin Kam

doi:10.1117/12.405385

24 October 2000 Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy

Dao Hua Zhang, X. Z. Wang, Hai Qun Zheng, Soon Fatt Yoon, Chan Hin Kam

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405385
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

We report growth and characterization of the Si-doped GaInAsP, lattice-matched to GaAs substrate, grown by solid source molecular beam epitaxy using a valve phosphorous cracker cell. It is found that the electron concentration increases with the temperature of Si effusion cell until 1150 degree C and decreases as the Si-cell temperature is increased further, due to the amphoteric behavior of Si. The Hall mobility follows the same trend except it reaches the maximum at a lower temperature. The Raman results reveal that the GaP-like LO mode of the materials decreases and the InP-like LO mode increases with the Si-cell temperature. It indicates that the excess Si may occupy the P site rather than As sites for p-type conduction. In addition, it is also found that Si doping has no significant influence on the lattice mismatch and has surface roughness.

Citation Download Citation

Dao Hua Zhang, X. Z. Wang, Hai Qun Zheng, Soon Fatt Yoon, and Chan Hin Kam "Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405385

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