Fabrication of oxide phosphor thin film electroluminescent devices using a sol-gel process

Tadatsugu Minami; Tetsuya Shirai; Toshihiro Miyata

doi:10.1117/12.420890

21 March 2001 Fabrication of oxide phosphor thin film electroluminescent devices using a sol-gel process

Tadatsugu Minami, Tetsuya Shirai, Toshihiro Miyata

Proceedings Volume 4235, Smart Structures and Devices; (2001) https://doi.org/10.1117/12.420890
Event: Smart Materials and MEMS, 2000, Melbourne, Australia

Abstract

Thick-insulating-ceramic-type thin-film electroluminescent (TFEL) devices with an oxide phosphor thin-film emitting layer have been fabricated by a sol-gel process that uses various source materials and eliminates the need for vacuum processes. The oxide phosphor thin-film emitting layer consisted of host materials such as Ga2O3, SnO2, ZnGa2O4 and (Ga2O3-Al2O3) multicomponent oxides activated with a transition metal element such as Mn and Cr or a rare earth element such as Eu. High luminances were obtained in TFEL devices with a Ga2O3:Mn, Ga2O3:Cr, SnO2:Eu, ZnGa2O4:Mn or (Ga2O3-Al2O3):Mn phosphor thin-film emitting layer. Luminances above 400 cd/m2 were obtained in green-emitting TFEL devices using Ga2O3:Mn thin films prepared by the sol-gel process, irrespective of source materials, when driven at 60 Hz. It was found that the EL characteristics of oxide phosphor TFEL devices improved as the driving frequency was increased from 60 Hz to 1 kHz. In a Mn- and Cr-co-doped Ga2O3 phosphor TFEL device, an emission color change from green to red as well as high luminances above 100 cd/m2 were obtained when driven at 10 kHz.

Citation Download Citation

Tadatsugu Minami, Tetsuya Shirai, and Toshihiro Miyata "Fabrication of oxide phosphor thin film electroluminescent devices using a sol-gel process", Proc. SPIE 4235, Smart Structures and Devices, (21 March 2001); https://doi.org/10.1117/12.420890

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