Diamond-based deep-UV sensors for lithography applications

Michael D. Whitfield; Stuart P. Lansley; Olivier Gaudin; Robert D. McKeag; Nadeem Hasan Rizvi; Richard B. Jackman

doi:10.1117/12.432534

29 June 2001 Diamond-based deep-UV sensors for lithography applications

Michael D. Whitfield, Stuart P. Lansley, Olivier Gaudin, Robert D. McKeag, Nadeem Hasan Rizvi, Richard B. Jackman

Proceedings Volume 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI; (2001) https://doi.org/10.1117/12.432534
Event: Photonics West 2001 - LASE, 2001, San Jose, CA, United States

Abstract

Next generation photolithography stepper tools will operate at 157 nm and require robust solid state photodetectors to ensure efficient operation and facilitate direct beam monitoring for photoresist dosimetry. There is currently no commercial detector system able to fully meet all the demanding requirements of this application. Diamond has a band gap of 5.5 eV. This implies that detectors fabricated from this material may be intrinsically visible blind and radiation hard. In this paper the results of the first study to assess the viability of the use of thin film polycrystalline diamond photodetectors for use in 157 nm F₂-He based laser lithography tools are presented. Co- planar interdigitated electrode structures were fabricated on free standing polycrystalline diamond to realise photoconductive devices. These were exposed to pulses from an F₂-He laser in the fluence range 0 - 1.4 mJcm^-2. The electrical and optical characteristics of the devices have been measured and are compared to the response of a standard vacuum photodiode. The diamond devices appear to be ideally suited for use at 157 nm in lithography applications.

Citation Download Citation

Michael D. Whitfield, Stuart P. Lansley, Olivier Gaudin, Robert D. McKeag, Nadeem Hasan Rizvi, and Richard B. Jackman "Diamond-based deep-UV sensors for lithography applications", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); https://doi.org/10.1117/12.432534

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