Optical properties of GaInNAs/GaAs laser structures

Dimitrios A. Alexandropoulos; Michael J. Adams

doi:10.1117/12.432590

9 July 2001 Optical properties of GaInNAs/GaAs laser structures

Dimitrios A. Alexandropoulos, Michael J. Adams

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432590
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

We present calculations of the optical properties of GaInNAs/GaAs quantum wells. In particular, we have estimated the spectral form of the material gain based on the Band Anti-Crossing (BAC) model. The electron effective mass and the conduction band density of states are calculated from the dispersion relation derived in the context of the BAC model. The effect of nitrogen on the valence band is considered to be minimal. Based on these gain calculations, we have derived the dispersion of the linewidth enhancement factor. In the light of these results we discus the limitations of the BAC model.

Citation Download Citation

Dimitrios A. Alexandropoulos and Michael J. Adams "Optical properties of GaInNAs/GaAs laser structures", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432590

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available