Mercury cadmium telluride: main semiconductor material of modern IR photoelectronics

Vitaly I. Stafeev

doi:10.1117/12.407737

28 November 2000 Mercury cadmium telluride: main semiconductor material of modern IR photoelectronics

Vitaly I. Stafeev

Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407737
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation

Abstract

Mercury Cadmium Telluride (MCT) alloy system attract attention of leading firms in many countries. On the base of MCT have been developed photoconductive and photovoltaic detectors, LWIR and MWIR focal plane arrays (FPA) of various type. More than two thirds of all IR photoelectronics systems use photodetectors on the basis of MCT. In this paper some aspects of the history of MCT development in former USSR during the last 40 years are discussed.

Citation Download Citation

Vitaly I. Stafeev "Mercury cadmium telluride: main semiconductor material of modern IR photoelectronics", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407737

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