Paper
24 August 2001 Effect of end group structures of methacrylate polymers on ArF photoresist performances
Hikaru Momose, Shigeo Wakabayashi, Tadayuki Fujiwara, Kiyoshi Ichimura, Jun Nakauchi
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Abstract
The relationship between the sensitivity of ArF photoresist and the end group structures of copolymers consisting of (beta) -hydroxy-(gamma) -butyrolactone methacrylate (HGBMA) and 2-methyl-2-adamantyl methacrylate (MadMA) was investigated. The sensitivity is strongly dependent on the kind and amount of end groups. It has been found that the copolymer with relatively non-polar end group structure has higher sensitivity than that with polar end group structure, and that the sensitivity of copolymer with end groups of methylisobutyrate and 1-octhylthio moieties showed approximately three times higher than that of copolymer with end groups of isobutyronitrile and 2-hydroxyethylthio moieties. The difference of sensitivity among these copolymers has been discussed from the view point of the change of development rate attributed to the amount of carboxylic acid groups formed in the resist film by exposure of 193nm light.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hikaru Momose, Shigeo Wakabayashi, Tadayuki Fujiwara, Kiyoshi Ichimura, and Jun Nakauchi "Effect of end group structures of methacrylate polymers on ArF photoresist performances", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436903
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Cited by 10 scholarly publications.
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KEYWORDS
Photoresist materials

Polymers

Transmittance

Semiconducting wafers

193nm lithography

FT-IR spectroscopy

Lithography

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