Paper
14 September 2001 New-generation projection optics for microlithography
Tsuneo Kanda, Takashi Kato
Author Affiliations +
Abstract
In order to meet the requirements of the Semiconductor industry, Canon has developed two new optical systems. First is an extension of KrF technology, with the introduction of high NA0.73 lens for KrF scanner that will cover the 130 nm device node. Second is the 0.57NA optics for wide field (30 mm square) i-line stepper, to be used cost-effectively on Mix & Match modes. These new generation lenses behave very low aberration. Wavefront is accurately measured by PMI (Phase Measurement Interferometer). At each tuning process, many image performance items are estimated by simulations, and then the results feed back to tuning. Further, not only we make Wavefront RMS minimum, but also each Zernike coefficients are balanced for the various pattern models. So the lens may perform to the level of the industry's requirement. This paper reports the imaging performance; simulation result calculated with final PMI data, and exposed image performance, of the above two new generation optics.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuneo Kanda and Takashi Kato "New-generation projection optics for microlithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435707
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Diffusion

Wavefronts

Nanoimprint lithography

Optical lithography

Distortion

Semiconductors

Image processing

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