Properties of thin film Si-C-N compositions

Alan B. Harker; Robert J. Ondercin; Karen R. Olson

doi:10.1117/12.439186

7 September 2001 Properties of thin film Si-C-N compositions

Alan B. Harker, Robert J. Ondercin, Karen R. Olson

Proceedings Volume 4375, Window and Dome Technologies and Materials VII; (2001) https://doi.org/10.1117/12.439186
Event: Aerospace/Defense Sensing, Simulation, and Controls, 2001, Orlando, FL, United States

Abstract

Thin films of selected amorphous and nano-crystalline compositions from the ternary phase diagram made up of carbon, silicon, and nitrogen, with a significant oxygen impurity, have been grown by chemical plasma reactions, ion beam deposition and plasma CVD. Characterization has focused on optical and mechanical properties to determine the compositions best suited for erosion resistant infrared (IR) optical coatings. The most desirable film compositions for the goal application are located in a compositional region around the C/Si atom ratio = 0.2 and C/N = 0.3. The most durable films have no apparent midwave infrared (IR) absorptions, an optical index of refraction ranging from 2 to 2.1, and indent hardness near 40 GPa. Thin film compositions nearer to carbon nitride show significant midwave absorption bands and lower hardness. Ambient thermal oxidation resistance increases with film nitrogen content, with the most durable films being stable at 700 degree(s)C in air.

Citation Download Citation

Alan B. Harker, Robert J. Ondercin, and Karen R. Olson "Properties of thin film Si-C-N compositions", Proc. SPIE 4375, Window and Dome Technologies and Materials VII, (7 September 2001); https://doi.org/10.1117/12.439186

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