High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask making

Wu-Song Huang; Ranee W. Kwong; Wayne M. Moreau; Robert Lang; Christopher F. Robinson; David R. Medeiros; Karen E. Petrillo; Ari Aviram; Arpan P. Mahorowala; Marie Angelopoulos; Christopher Magg; Mark Lawliss; Thomas B. Faure

doi:10.1117/12.438350

5 September 2001 High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask making

Wu-Song Huang, Ranee W. Kwong, Wayne M. Moreau, Robert Lang, Christopher F. Robinson, David R. Medeiros, Karen E. Petrillo, Ari Aviram, Arpan P. Mahorowala, Marie Angelopoulos, Christopher Magg, Mark Lawliss, Thomas B. Faure

Author Affiliations +

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438350
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

Recently, there is a significant interest in using CA resists for electron beam (E-beam) mask making application. CA resists provide superior lithographic performance in comparison to traditional non CA E-beam resists in particular high contrast, resolution, and sensitivity. However, most current CA resists exhibit very large sensitivity to PAB and/or PEB temperatures resulting in significant impact on CD. In addition, image collapse issues associated with high aspect ratio patterning as well as electron scattering effects in low KeV tools necessitate thinner resists. Therefore, there is a need to have a high etch resistant resist system which can withstand the demanding chrome etch process. Previously, we reported on the KRS-XE resist which exhibits dry etch resistance comparable to the best deep UV resist and excellent lithographic performance and bake latitudes. No PEB is needed for this resist. In this paper, we report on an advanced KRS-XE resist formulation which exhibits dry etch resistance surpassing the industry standard, novolak, in the chrome etch process. This new resist also exhibits excellent lithographic performance - 50nm lines/space delineated and requires no PEB. This paper will highlight the lithographic and etch performance of this new resist.

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Wu-Song Huang, Ranee W. Kwong, Wayne M. Moreau, Robert Lang, Christopher F. Robinson, David R. Medeiros, Karen E. Petrillo, Ari Aviram, Arpan P. Mahorowala, Marie Angelopoulos, Christopher Magg, Mark Lawliss, and Thomas B. Faure "High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask making", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438350

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