Application of GaN laterally overgrown on sapphire

Regina Paszkiewicz; Ryszard Korbutowicz; Bogdan Paszkiewicz; D. Radziewicz; J. Kozlowski; Marek J. Tlaczala

doi:10.1117/12.425404

17 April 2001 Application of GaN laterally overgrown on sapphire

Regina Paszkiewicz, Ryszard Korbutowicz, Bogdan Paszkiewicz, D. Radziewicz, J. Kozlowski, Marek J. Tlaczala

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425404
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The paper presents the results of work concerning the elaboration of GaN pseudo-bulk technology. The growth mechanism of epitaxial lateral overgrowth (ELO) GaN affected by mask patterns and the MOVPE growth process parameters are presented and discussed. The conditions to obtain full coalescence of isolated stripes leading to pseudo-bulk GaN substrate growth are specified.

Citation Download Citation

Regina Paszkiewicz, Ryszard Korbutowicz, Bogdan Paszkiewicz, D. Radziewicz, J. Kozlowski, and Marek J. Tlaczala "Application of GaN laterally overgrown on sapphire", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425404

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