All-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier

Horacio Soto; C. A. Diaz

doi:10.1117/12.437212

14 August 2001 All-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier

Horacio Soto, C. A. Diaz

Proceedings Volume 4419, 4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications; (2001) https://doi.org/10.1117/12.437212
Event: IV Iberoamerican Meeting of Optics and the VII Latin American Meeting of Optics, Lasers and Their Applications, 2001, Tandil, Argentina

Abstract

In this paper, we demonstrate experimentally the fulfillment of al-optical AND and NAND gates using the cross- polarization modulator effect in a semiconductor optical amplifier. The efficiency of this effect was estimated by measuring the conversion coefficients indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam.

Citation Download Citation

Horacio Soto and C. A. Diaz "All-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier", Proc. SPIE 4419, 4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications, (14 August 2001); https://doi.org/10.1117/12.437212

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