Ultrafast laser-induced crystallization of amorphous silicon films

Taeyul Choi; David J. Hwang; Constantine P. Grigoropoulos

doi:10.1117/12.456891

25 February 2002 Ultrafast laser-induced crystallization of amorphous silicon films

Taeyul Choi, David J. Hwang, Constantine P. Grigoropoulos

Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456891
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore

Abstract

Ultra-short pulsed laser irradiation was used to crystallize an a-Si film with a laser fluence of 0.12 J/cm². The crystallization process was observed by time-resolved pump- and-probe imaging in the range of 0.2 ps to 100 ns. Reflectivity data along with post-processed SEM pictures provide evidence for a non-thermal ultra-fast solid-phase transition. A crystallization sequence based on atomic self- diffusion is suggested.

Citation Download Citation

Taeyul Choi, David J. Hwang, and Constantine P. Grigoropoulos "Ultrafast laser-induced crystallization of amorphous silicon films", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456891

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