Paper
18 June 2002 Integrated InGaAs-InP quantum wire lasers and Stark effect modulators for 1.55-micro applications
Wenli Huang, Faquir C. Jain
Author Affiliations +
Abstract
Quantum wire lasers and modulators offer superior performance over their quantum well counterparts. This paper presents simulation of an integrated InGaAs-InP quantum wire laser-modulator structure operating at 1.55 μm. In the case of quantum wire lasers, we have computed the optical gain as a function of current density for wires having widths ranging between 60-100 Å. For example, the threshold current density of as low as 61 A/cm2 is computed for a wire with a width of 80 Å. In case of quantum wire modulators, we compute the changes in the absorption coefficient and index of refraction due to an external electric field ranging between 0-120kV/cm. For example, the percentage of absorption changes (Δα/α) between 30kV/cm and 60kV/cm applied electric field is about 450% for a 80 Å quantum wire. The changes in electro-absorption or electro-refraction can be maximized by choosing optimum combination of wire dimensions, operating wavelength and electric field to obtain lasing and modulation.
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Wenli Huang and Faquir C. Jain "Integrated InGaAs-InP quantum wire lasers and Stark effect modulators for 1.55-micro applications", Proc. SPIE 4640, Integrated Optics: Devices, Materials, and Technologies VI, (18 June 2002); https://doi.org/10.1117/12.433295
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KEYWORDS
Absorption

Modulators

Excitons

Electrons

Quantum computing

Ranging

Laser applications

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