Carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy

Y. Chen; Kong-Thon F. Tsen; David K. Ferry

doi:10.1117/12.470427

11 June 2002 Carrier dynamics in In_xGa_1-xAs_1-yN_y by picosecond Raman spectroscopy

Y. Chen, Kong-Thon F. Tsen, David K. Ferry

Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470427
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown In_xGa_1-xAs_1-yN_y(x=0.03 and y=0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density napproximately equals 10¹⁸cm^-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in In_xGa_1-xAs_1-yN_y is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Citation Download Citation

Y. Chen, Kong-Thon F. Tsen, and David K. Ferry "Carrier dynamics in In_xGa_1-xAs_1-yN_y by picosecond Raman spectroscopy", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); https://doi.org/10.1117/12.470427

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