Carrier dynamics in In(Ga)As/Ga(Al)As self-organized quantum dots

Pallab Bhattacharya; Theodore B. Norris; Jasprit Singh; Junji Urayama

doi:10.1117/12.460810

28 March 2002 Carrier dynamics in In(Ga)As/Ga(Al)As self-organized quantum dots

Pallab Bhattacharya, Theodore B. Norris, Jasprit Singh, Junji Urayama

Proceedings Volume 4656, Quantum Dot Devices and Computing; (2002) https://doi.org/10.1117/12.460810
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Self-organized quantum dots are being incorporated in the active regions of interband lasers, modulators, and infrared detectors and sources. The unique hot-carrier relaxation rates in quantum dots play an important role in defining the device characteristics. We have conducted extensive theoretical and experimental studies of carrier dynamics in In(Ga)As/Ga(Al)As self-organized quantum dots grown by molecular beam epitaxy. Experimental techniques used include small and large-signal modulation of lasers and femtosecond pump-probe spectroscopy. It is found that the intersubband electron relaxation rates, which are strongly temperature dependent, are determined by electron-hole scattering in the dots. Theoretical calculations also show that electron-hole scattering is the dominant mechanism for the relaxation of hot carriers. It is also found that a phonon bottleneck exists in the dots for very weak excitations. The implications of these results on device performance will be discussed.

Citation Download Citation

Pallab Bhattacharya, Theodore B. Norris, Jasprit Singh, and Junji Urayama "Carrier dynamics in In(Ga)As/Ga(Al)As self-organized quantum dots", Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); https://doi.org/10.1117/12.460810

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