New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

P. I. Khadzhi; K. D. Lyakhomskaya; L. Yu Nadkin; D. A. Markov

doi:10.1117/12.468932

29 May 2002 New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

P. I. Khadzhi, K. D. Lyakhomskaya, L. Yu Nadkin, D. A. Markov

Author Affiliations +

Proceedings Volume 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures; (2002) https://doi.org/10.1117/12.468932
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus

Abstract

The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

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P. I. Khadzhi, K. D. Lyakhomskaya, L. Yu Nadkin, and D. A. Markov "New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors", Proc. SPIE 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures, (29 May 2002); https://doi.org/10.1117/12.468932

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KEYWORDS

Excitons

Refractive index

Semiconductors

Wave propagation

Crystals

Electromagnetic radiation

Interfaces

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