Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response

Chin-Ying Chen; Jyh-Jier Ho; Yean-Kuen Fang; F.-Y. Chen

doi:10.1117/12.451893

5 December 2002 Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response

Chin-Ying Chen, Jyh-Jier Ho, Yean-Kuen Fang, F.-Y. Chen

Proceedings Volume 4795, Materials for Infrared Detectors II; (2002) https://doi.org/10.1117/12.451893
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

In this paper, a thin PbTiO₃-n-p⁺ silicon switch sensor has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The sensor has a rapid response time of 0.65 μs compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. Meanwhile in this paper, we have successfully analyzed the rapid switching transient response by using heat conduction and switching theory. The experimental results are in agreement with the theoretical analysis.

Citation Download Citation

Chin-Ying Chen, Jyh-Jier Ho, Yean-Kuen Fang, and F.-Y. Chen "Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.451893

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