Si nanostructures embedded in SiO2: electronic and optical properties

Stefano Ossicini; Elena Degoli; Marcello Luppi; Rita Magri

doi:10.1117/12.452043

5 November 2002 Si nanostructures embedded in SiO₂: electronic and optical properties

Stefano Ossicini, Elena Degoli, Marcello Luppi, Rita Magri

Proceedings Volume 4808, Optical Properties of Nanocrystals; (2002) https://doi.org/10.1117/12.452043
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

We present ab initio results for the structural, electronic and optical properties of silicon nanostructures confined by silicon dioxide. We investigate the role of the dimension, symmetry and bonding situations at the interfaces. In particular we consider Si/SiO₂ superlattices and Si nanocrystals embedded in SiO₂ matrix. In the case of Si/SiO₂ superlattices the presence of oxygen defects at the interface and the dimensionality are the key points in order to explain the experimental outcomes concerning photoluminescence. For Si nanocrystals embedded in SiO₂ we show, in agreement with experimental results, the close interplay between chemical and structural effects on the electronic and optical properties.

Citation Download Citation

Stefano Ossicini, Elena Degoli, Marcello Luppi, and Rita Magri "Si nanostructures embedded in SiO₂: electronic and optical properties", Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); https://doi.org/10.1117/12.452043

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