P-channel MODFET as an optoelectronic detector

Hwe-Jong Kim; Dong Myong Kim; Il Ki Han; Won Jun Choi; Jacques Zimmermann; Jung Il Lee

doi:10.1117/12.481019

29 August 2002 P-channel MODFET as an optoelectronic detector

Hwe-Jong Kim, Dong Myong Kim, Il Ki Han, Won Jun Choi, Jacques Zimmermann, Jung Il Lee

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481019
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Optical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical illumination is explained. The results show power law relation between the current variation and the optical intensity. Near-threshold region in saturation region is found to be most sensitive to the optical intensity variation

Citation Download Citation

Hwe-Jong Kim, Dong Myong Kim, Il Ki Han, Won Jun Choi, Jacques Zimmermann, and Jung Il Lee "P-channel MODFET as an optoelectronic detector", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481019

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