Modeling effects of laser beam shaping for projection laser crystallization

Hidayat Kisdarjono; Apostolos T. Voutsas; Rajendra Solanki

doi:10.1117/12.482590

16 May 2003 Modeling laser beam spatial separation effects for projection laser crystallization

Hidayat Kisdarjono, Apostolos T. Voutsas, Rajendra Solanki

Proceedings Volume 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas; (2003) https://doi.org/10.1117/12.482590
Event: Electronic Imaging 2003, 2003, Santa Clara, CA, United States

Abstract

A model for projection laser crystallization of thin silicon films has been developed. The model is capable of simulating stochastic nucleation and grain growth to predict the extent of lateral growth (LG) in the film and the details of the final microstructure. This model was used to simulate irradiation schemes involving multiple pulses, designed to increase the lateral growth length (LGL) in the irradiated domain. For an irradiation scheme involving two pulses, with an adjustable time delay, our simulation predicted a maximum increase in LGL of about 50% (from 2μm to 3μm) with a maximum film temperature of ~2700 K. For a three-pulse irradiation scheme (without time delay) a 50% increase in LGL was also predicted, but with a maximum film temperature of ~2200 K. These simulations show the efficacy and the relative merit of each of the examined schemes, as well as, their associated process window.

Citation Download Citation

Hidayat Kisdarjono, Apostolos T. Voutsas, and Rajendra Solanki "Modeling laser beam spatial separation effects for projection laser crystallization", Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); https://doi.org/10.1117/12.482590

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