4-micron-pixel CMOS image sensor with low-image lag and high-temperature operability

Yasuyuki Endo; Yoshikazu Nitta; Hiroshi Kubo; Takeshi Murao; Ken'ichi Shimomura; Masatoshi Kimura; Kenji Watanabe; Satoshi Yamamoto; Shinji Komori

doi:10.1117/12.482802

16 May 2003 4-μm pixel CMOS image sensor with low-image lag and high-temperature operability

Yasuyuki Endo, Yoshikazu Nitta, Hiroshi Kubo, Takeshi Murao, Ken'ichi Shimomura, Masatoshi Kimura, Kenji Watanabe, Satoshi Yamamoto, Shinji Komori

Author Affiliations +

Proceedings Volume 5017, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications IV; (2003) https://doi.org/10.1117/12.482802
Event: Electronic Imaging 2003, 2003, Santa Clara, CA, United States

Abstract

We present a development of a high image quality color VGA CMOS image sensor with 4-micron pixel pitch, especially focusing on reduction of image lag. In order to eliminate image lag, improvement of charge transfer efficiency from photodiode (PD) to floating diffusion (FD) is a key point. We implemented two novel techniques for this purpose. The first technical point is an optimum design of pixel layout, which provides both high fill factor and a large channel width of transfer gate transistor (TG). We achieved both high fill factor of 42% without microlens and large TG channel width of 1.79um, which is 2.4 times larger than the minimum channel width allowed by design rule. The second technical point is a new device structure of TG by a novel Boron implantation process. This brings a wide path of charge transfer from PD to FD. High-quality images with low image lag, less than 0.75%, were obtained. Moreover, we also achieved a CMOS image sensor with high-temperature operability. In order to stabilize an adequate black level, we developed a new scheme of a black level control that adjusts offset voltages of amplifiers with feedback signal from analog-digital converter (ADC). An adequate black level was realized up to 100 degrees centigrade for a 5.6-micron pitch monochrome CIF sensor.

Citation Download Citation

Yasuyuki Endo, Yoshikazu Nitta, Hiroshi Kubo, Takeshi Murao, Ken'ichi Shimomura, Masatoshi Kimura, Kenji Watanabe, Satoshi Yamamoto, and Shinji Komori "4-μm pixel CMOS image sensor with low-image lag and high-temperature operability", Proc. SPIE 5017, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications IV, (16 May 2003); https://doi.org/10.1117/12.482802

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available