Paper
11 June 2003 Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field
Amir Abbas Farajian, Hiroshi Mizuseki, Yoshiyuki Kawazoe
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Abstract
The effects of different spin orientations on transport through carbon nanotubes are studied, using a simple tight-binding model within the mean-field approximation. It turns out that, in the absence of external magnetic field, the mean-field ground states of both semiconducting and metallic nanotubes are antiferromagnetic. As regards electronic/transport properties, it is observed that the conductance characteristics of spin-up and spin-down carriers are separated, and a negative differential resistance (NDR) feature in the I-V characteristics is detected, when the system is subjected to external magnetic field. NDR is particularly interesting for a wide range of applications.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amir Abbas Farajian, Hiroshi Mizuseki, and Yoshiyuki Kawazoe "Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514540
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KEYWORDS
Magnetism

Carbon nanotubes

Chemical species

Semiconductors

Magnetic semiconductors

Resistance

Carbon

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