Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistor

I. Grekhov; L. Delimova; I. Liniichuk; D. Mashovets; I. Veselovsky

doi:10.1117/12.514253

11 June 2003 Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistor

I. Grekhov, L. Delimova, I. Liniichuk, D. Mashovets, I. Veselovsky

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514253
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

A possibility of fabricating all-perovskite field effect transistor is shown, which can provide the development of a nonvolatile memory cell with a nondestructive readout of information. A thin (approximately 5 - 10 nm) Sr-doped lantanate cuprate (LSCO) film was used as a transistor channel while a ferroelectric gate insulator was a lead zirconate titanate (PLZT) film of about 100 nm thickness. The modulation of a channel conduction was found in the studied transistors to be approximately 70%, which is an order of magnitude larger than that reported in the world literature.

Citation Download Citation

I. Grekhov, L. Delimova, I. Liniichuk, D. Mashovets, and I. Veselovsky "Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistor", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514253

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