Effects of body biasing on the low-frequency noise of NMOSFETs from a 130-nm CMOS technology

Mathieu Marin; M. Jamal Deen; Mario de Murcia; Pierre Llinares; Jean Charles Vildeuil

doi:10.1117/12.488964

12 May 2003 Effects of body biasing on the low-frequency noise of NMOSFETs from a 130-nm CMOS technology

Mathieu Marin, M. Jamal Deen, Mario de Murcia, Pierre Llinares, Jean Charles Vildeuil

Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.488964
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

We investigate the impact of body biasing on the low frequency noise (LFN) performances of NMOS transistors from a transistors 130 nm CMOS technology. The body-to-source voltage V_BS was varied from - 0.5 to + 0.5 V for reverse and forward mode substrate biasing. A detailed electrical characterization was performed and the benefits of the body bias analysed in terms of current and maximum transconductance variations. Noise measurements were first performed at low drain bias V_DS = 25 mV and V_BS = 0 V in order to discuss the noise model. Results are in agreement with the carrier number fluctuation theory. Bulk bias dependence of the LFN was investigated at V_DS = V_DD = 1.2 V. Significant noise reduction is observed in the subthreshold regime when applying a forward body bias. In strong inversion, the noise level is found to be approximately independent of the substrate bias V_BS.

Citation Download Citation

Mathieu Marin, M. Jamal Deen, Mario de Murcia, Pierre Llinares, and Jean Charles Vildeuil "Effects of body biasing on the low-frequency noise of NMOSFETs from a 130-nm CMOS technology", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.488964

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