Isolating surface and bulk contributions in an HgCdTe junction diode

Vishnu Gopal; Sudha Gupta; R. K. Bhan; R. Pal; P. K. Chaudhary; V. Kumar

doi:10.1117/12.517323

30 September 2003 Isolating surface and bulk contributions in an HgCdTe junction diode

Vishnu Gopal, Sudha Gupta, R. K. Bhan, R. Pal, P. K. Chaudhary, V. Kumar

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517323
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

This paper reports the possibility of assessing the relative surface and bulk contributions in HgCdTe junction diodes by analyzing the Current - voltage (I - V) and dynamic impedance - voltage (R_d - V) characteristics of an individual diode. As an example, an analysis of the experimental data obtained on diodes fabricated in our laboratory on bulk grown p-type HgCdTe wafers using B⁺ implantation and ZnS passivating layers will be presented.

Citation Download Citation

Vishnu Gopal, Sudha Gupta, R. K. Bhan, R. Pal, P. K. Chaudhary, and V. Kumar "Isolating surface and bulk contributions in an HgCdTe junction diode", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517323

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