Paper
1 June 2004 Lateral mode selection in a broad-area laser diode by self-injection locking with a mirror stripe
Author Affiliations +
Abstract
In this paper, we demonstrate lateral mode selection and amplification in a broad area laser (BAL) diode in an external cavity. The cavity is based on self-injection locking of an 807 nm, 3W broad area diode using a mirror stripe as the feedback unit. At the optimum mirror stripe position, the lateral far-field intensity profile is narrowed 8.5 times compared with the profile from the freely running laser when running at a drive current of twice the threshold current. We have determined the lateral angular range, in which, different array modes can be exited and, only, within a narrow range around 2.3° from the beam center a high, spatial beam coherence can be obtained.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Birgitte Thestrup, Mingjun Chi, and Paul Michael Petersen "Lateral mode selection in a broad-area laser diode by self-injection locking with a mirror stripe", Proc. SPIE 5336, High-Power Diode Laser Technology and Applications II, (1 June 2004); https://doi.org/10.1117/12.529005
Lens.org Logo
CITATIONS
Cited by 7 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mirrors

Semiconductor lasers

Diodes

Laser resonators

Diffraction

High power lasers

Laser damage threshold

Back to Top