Paper
16 June 2004 Electronic charge transport in sapphire studied by optical-pump/THz-probe spectroscopy
Feng Wang, Jie Shan, Ernst Knoesel, Mischa Bonn, Tony F. Heinz
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Abstract
THz time-domain spectroscopy (THz TDS) with ultrafast photo-excitation is applied to probe the complex conductivity of the charge carriers in sapphire over the temperature range of 40 - 350 K. A comparison of the measured complex conductivity to the Drude model yields the carrier scattering rate and density. The dependence of the carrier scattering rate on temperature and sample purity is used to identify the scattering mechanisms in sapphire. In the higher temperature range, scattering is determined by intrinsic phonon processes, but impurity scattering becomes dominant at low temperatures in typical optical-grade samples. In high-purity samples, however, impurity scattering remains negligible down to 40 K, and carrier mobilities exceeding 10,000 cm2/Vs can be achieved.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feng Wang, Jie Shan, Ernst Knoesel, Mischa Bonn, and Tony F. Heinz "Electronic charge transport in sapphire studied by optical-pump/THz-probe spectroscopy", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); https://doi.org/10.1117/12.532505
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Cited by 9 scholarly publications.
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KEYWORDS
Scattering

Sapphire

Terahertz radiation

Phonons

Temperature metrology

Spectroscopy

Crystals

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