Picosecond vibrational dynamics and stability of deuterated amorphous silicon thin films

Jon-Paul R. Wells; Ruud E.I. Schropp; Lex F. G. van der Meer; Jaap I. Dijkhuis

doi:10.1117/12.527699

16 June 2004 Picosecond vibrational dynamics and stability of deuterated amorphous silicon thin films

Jon-Paul R. Wells, Ruud E.I. Schropp, Lex F. G. van der Meer, Jaap I. Dijkhuis

Proceedings Volume 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII; (2004) https://doi.org/10.1117/12.527699
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We report both temperature and excitation density dependent, four wave mixing measurements on Si-D stretch vibrations in deuterated amorphous silicon thin films. Utilising the infrared output of a free electron laser (FEL), we have made transient grating measurements of the temperature dependent anharmonic decay rate of Si-D stretch vibrations in deuterated amorphous silicon. Unlike Si-H vibrations, it is round that the excited deuterium mode relaxed with a single exponential decay rate into collective modes of the host, bypassing the local bending modes. Vibrational photon echo measurements suggest that phase coherence is lost via elastic phonon scattering with excitation (but not temperature) dependent contributions from non-equilibrium phonons. The degradation of p-i-n solar cells with identical intrinsic absorber layers (to those used for the time domain experiments) under prolonged light soaking treatments show that α-Si:D has a superior resistance to light induced defect creation.

Citation Download Citation

Jon-Paul R. Wells, Ruud E.I. Schropp, Lex F. G. van der Meer, and Jaap I. Dijkhuis "Picosecond vibrational dynamics and stability of deuterated amorphous silicon thin films", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); https://doi.org/10.1117/12.527699

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