A high-resolution contamination-mode inspection method providing a complete solution to the inspection challenges for advanced photomasks

Kaustuve Bhattacharyya; Yao-Tsu Huang; Kong Son; Den Wang; Louie Liu; C. H. Liao; Yi-Ming Dai; Jyh-Ching Lin

doi:10.1117/12.533793

24 May 2004 A high-resolution contamination-mode inspection method providing a complete solution to the inspection challenges for advanced photomasks

Kaustuve Bhattacharyya, Yao-Tsu Huang, Kong Son, Den Wang, Louie Liu, C. H. Liao, Yi-Ming Dai, Jyh-Ching Lin

Author Affiliations +

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.533793
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

High-resolution contamination inspection for advanced reticles remains crucial in light of the increasing trend of progressive defects such as crystal growth, haze, fungus, precipitate etc., introduced with DUV lithography, especially for low k1 processes. In most fab environments, routine incoming and re-qualification inspections for photomasks have been implemented. But although this high-resolution inspection provides necessary high-sensitivity, on advanced photomasks it often introduces inspection challenges. Aggressive OPCs and dense primary and secondary geometries are some of the many factors that can result in false-defect problems for the inspection systems. Thus, inspection needs to be desensitized. As an effort to identify a methodology to provide the inspectability while maintaining the necessary high-sensitivity, a characterization has been performed to evaluate a new combination-mode inspection. This technical paper will list the details of this special contamination inspection technique that will allow users to maintain the same high inspection throughput while providing similar or higher resolution inspection for these advanced reticles with superior inspectability.

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Kaustuve Bhattacharyya, Yao-Tsu Huang, Kong Son, Den Wang, Louie Liu, C. H. Liao, Yi-Ming Dai, and Jyh-Ching Lin "A high-resolution contamination-mode inspection method providing a complete solution to the inspection challenges for advanced photomasks", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.533793

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